Bulk Contact Between Silver Nanowires Top Electrode and Interface Layer Enables High Performance of Full‐Solution‐Processed Semitransparent Organic Solar Cell Module

Author:

Zha Wusong12,Chen Li-Min3,Sun Shaoming4,Gao Xiaomei2,Han Yunfei2,Liu Tong5,Luo Qun12ORCID,Chao Yu-Chiang6,Zan Hsiao-Wen7,Meng Hsin-Fei8,Zhu Xiaozhang4,Ma Chang-Qi12

Affiliation:

1. School of Nano-Tech and Nano-Bionics University of Science and Technology of China Hefei 230027 P. R. China

2. i-Lab & Printable Electronics Research Center Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences (CAS) Suzhou 215123 P. R. China

3. Department of Electro-Physics National Yang Ming Chiao Tung University Hsinchu 300 Taiwan

4. Beijing National Laboratory for Molecular Sciences CAS Key Laboratory of Organic Solids Institute of Chemistry Chinese Academy of Sciences, Beijing 100190 P. R. China

5. Vacuum Interconnected Nanotech Workstation (Nano-X) Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences (CAS) Suzhou 215123 P. R. China

6. Department of Physics National Taiwan Normal University Taipei 106 Taiwan

7. Department of Photonics National Yang Ming Chiao Tung University Hsinchu 300 Taiwan

8. Institute of Physics National Yang Ming Chiao Tung University Hsinchu 300 Taiwan

Abstract

The solution‐processed electrode is key to the full‐solution‐processed organic solar cells (OSCs). Silver nanowires (AgNWs) are considered as an attractive solution‐processed electrode due to their low sheet resistance and high transmittance. However, the traditional “line‐plane” contact between AgNWs and the interface buffer layer is insufficient, resulting in the low performance of full‐solution‐processed OSCs. Herein, a bulk contact structure is reported between AgNWs and interface, formed by inserting the interface layer material, such as HMoOx (hydrogen molybdenum bronze) into the AgNWs networks. The extra HMoOx can be connected with the bottom interface buffer layer, forming a longitudinal network, and wrapping the AgNWs in the longitudinal interfacial layer. This bulk contact electrode‐interface structure increases the area of AgNWs/interface layers, promoting charge transfer and collection. Besides, the top‐injected method can enable the formation of a water‐based ink film on the top of the organic layer, as well as avoid solvent erosion between AgNWs and the interface layer. Based on the bulk contact electrode‐interface structure, this work realized high performance of 12.27% and 9.54% for 0.09 cm2 small‐area device and 10.8 cm2 full‐solution‐processed semitransparent mini‐module. These results provide a new idea for full‐solution‐processed OSCs preparation.

Funder

National Natural Science Foundation of China

Youth Innovation Promotion Association

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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