Kinetics Study on Carrier Injection‐Induced Degradation and Regeneration at Elevated Temperature in p‐Type Cast‐Monosilicon Passivated Emitter Rear Contact Solar Cells-Reference-Cited by-同舟云学术

Kinetics Study on Carrier Injection‐Induced Degradation and Regeneration at Elevated Temperature in p‐Type Cast‐Monosilicon Passivated Emitter Rear Contact Solar Cells

Published:2021-04-22 Issue:7 Volume:5 Page:2100035
ISSN:2367-198X
Container-title:Solar RRL
language:en
Short-container-title:Solar RRL

Author:

Hu Zechen¹^ORCID,He Qiyuan¹,Yuan Shuai¹,Lin Dehang¹,Song Lihui¹²,Yu Xuegong¹^ORCID,Yang Deren¹

Affiliation:

1. State Key Lab of Silicon Materials and Department of Materials Science & Engineering Zhejiang University Hangzhou 310027 P. R. China

2. College of Materials & Environmental Engineering Hangzhou Dianzi University No. 1, 2nd Street, Jianggan District Hangzhou 310018 P. R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/solr.202100035

Reference22 articles.

1. Defect engineering in cast mono‐like silicon: A review

2. Controlling dislocation gliding and propagation in quasi-single crystalline silicon by using <110>-oriented seeds

3. Designing functional Σ13 grain boundaries at seed junctions for high-quality cast quasi-single crystalline silicon

4. K.Ramspeck S.Zimmermann H.Nagel A.Metz Y.Gassenbauer B.Birkmann A.Seidl in27th European Photovoltaic Solar Energy Conf. Proc. München Germany2012 p.861.

5. Light-induced degradation of PECVD aluminium oxide passivated silicon solar cells

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