A dual gate material tunnel field effect transistor model incorporating two‐dimensional Poisson and Schrodinger wave equations-Reference-Cited by-同舟云学术

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A dual gate material tunnel field effect transistor model incorporating two‐dimensional Poisson and Schrodinger wave equations

Published:2021-07-11 Issue:1 Volume:35 Page:
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int J Numerical Modelling

Author:

Mohanty Sadhana Subhadarshini¹,Dutta Pradipta¹^ORCID,Das Jitendra Kumar¹

Affiliation:

1. Department of Electronics and Communication Engineering Kalinga Institute of Industrial Technology, Deemed to be University Bhubaneswar India

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jnm.2933

Reference43 articles.

1. Low-Voltage Tunnel Transistors for Beyond CMOS Logic

2. Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs

3. Integration Process of Impact-Ionization Metal–Oxide–Semiconductor Devices with Tunneling Field-Effect-Transistors and Metal–Oxide–Semiconductor Field-Effect Transistors

4. SinghJ RamakrishnanK MookerjeaS DattaS VijaykrishnanN PradhanD.A novel Si‐tunnel FET based SRAM design for ultralow‐power 0.3 V VDD applications. In: Design Automation Conference (ASP‐DAC);2010 pp.181‐186.

5. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

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1. Analog performance and linearity analysis of a p-type group IV-IV SiGe TFET;Journal of Computational Electronics;2024-03-19

2. P-type Dual Material Gate Si and Si_(1-x)Ge_x TFETs: A Comparative Study for DC and Analog/RF Performance Evaluation;2024 Fourth International Conference on Advances in Electrical, Computing, Communication and Sustainable Technologies (ICAECT);2024-01-11

3. Quantization, gate dielectric and channel length effect in double-gate tunnel field-effect transistor;Results in Physics;2022-03

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