Gaseous Catalyst Assisted Growth of Graphene on Silicon Carbide for Quantum Hall Resistance Standard Device

Author:

Chen Lingxiu12,Wang HuiShan13,Kong Ziqiang13,Zhai Changwei45,Wang Xiujun13,Wang Yibo13,Liu Zhengtai1,Jiang Chengxin16,Chen Chen13,Shen Dawei1,Chen Xipin7,Zhu Yuxuan8,Bao Wenzhong8,Yang Zhenyu45,Lu Yunfeng45,Wang Haomin13ORCID

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China

2. School of Materials Science and Physics China University of Mining and Technology Xuzhou 221116 China

3. Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China

4. National Institute of Metrology Beijing 100029 China

5. Key Laboratory of Electrical Quantum Standards for State Market Regulation Beijing 100029 China

6. School of Physical Science and Technology ShanghaiTech University Shanghai 201210 China

7. International Department the Affiliated High School of South China Normal University Guangzhou 510630 China

8. State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China

Funder

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality

China Postdoctoral Science Foundation

ShanghaiTech University

Publisher

Wiley

Subject

Industrial and Manufacturing Engineering,Mechanics of Materials,General Materials Science

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