Straining and Tuning Atomic Layer Nanoelectromechanical Resonators via Comb‐Drive MEMS Actuators-Reference-Cited by-同舟云学术

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Straining and Tuning Atomic Layer Nanoelectromechanical Resonators via Comb‐Drive MEMS Actuators

Published:2020-12-11 Issue:2 Volume:6 Page:2000794
ISSN:2365-709X
Container-title:Advanced Materials Technologies
language:en
Short-container-title:Adv. Mater. Technol.

Author:

Xie Yong¹²^ORCID,Lee Jaesung¹³^ORCID,Wang Yanan¹³^ORCID,Feng Philip X.‐L.¹³^ORCID

Affiliation:

1. Department of Electrical Engineering & Computer Science Case School of Engineering Case Western Reserve University Cleveland OH 44106 USA

2. Key Laboratory of Wide Band‐Gap Semiconductor Technology School of Advanced Materials and Nanotechnology Xidian University Xi'an 710071 China

3. Department of Electrical & Computer Engineering Herbert Wertheim College of Engineering University of Florida Gainesville FL 32611 USA

Funder

National Science Foundation

National Natural Science Foundation of China

China Scholarship Council

Publisher

Wiley

Subject

Industrial and Manufacturing Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admt.202000794

Reference47 articles.

1. Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs

2. Strain scaling for CMOS

3. Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe2

4. Giant Mechano-Optoelectronic Effect in an Atomically Thin Semiconductor

5. Controlling the coherence of a diamond spin qubit through its strain environment

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3. Identification and Structural Characterization of Twisted Atomically Thin Bilayer Materials by Deep Learning;Nano Letters;2024-02-26

4. Strain-enhanced dynamic ranges in two-dimensional MoS2 and MoTe2 nanomechanical resonators;Applied Physics Reviews;2024-01-26

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