Design of Wireless Multiple Gases Complementary Architecture Sensors Based on SnSe2 and PtSe2 Layered Films and Oscillating Circuits

Author:

Hsu Che‐Hao123,Liao Hung‐Yu24,Wang Kuangye123,Kuo Tzu‐Wen123,Liu Che‐Chuan24,Shih Jiaw‐Ren24,Lin Chrong‐Jung24,Chen Chieh‐Ting123,Peng Yu‐Ren123,Yang Tzu‐Yi123,Kao Man‐Yun123,Huang Hai‐Feng123,Shen Hsin‐Yi24,King Ya‐Chin24,Chueh Yu‐Lun1235ORCID

Affiliation:

1. Department of Materials Science and Engineering and Frontier Research Center on Fundamental and Applied Sciences of Matters National Tsing‐Hua University Hsinchu 30013 Taiwan

2. Colleage of Semiconductor Research National Tsing‐Hua University Hsinchu 30013 Taiwan

3. Department of Physics National Sun Yat‐Sen University Kaohsiung 80424 Taiwan

4. Institute of Electronics Engineering National Tsing Hua University Hsinchu 30013 Taiwan

5. Department of Materials Science and Engineering Korea University Seoul 02841 Republic of Korea

Abstract

AbstractOwing to the increasing demand for monitoring harmful toxic gases using small‐sized low‐power‐consumption gas sensors, a room‐temperature wireless complimentary gas sensor incorporating layered materials is proposed and demonstrated. The compact design allows the sensing module to be installed under all conditions and facilitates multiple detections of toxic gas. Highly chemical‐resistance‐sensitive materials based on n‐type SnSe2 and p‐type PtSe2 layered materials prepared by the plasma‐assisted chemical vapor reaction (PACVR) method at low temperatures are integrated with an oscillation circuit and antenna fabricated by a 28‐nm CMOS high‐k metal gate logic process to achieve dense, low‐powered, and wireless characteristics. By pairing n‐ and p‐type layered semiconductors, the gas sensors feature less influence from the surroundings, such as temperature and humidity, and enhance sensitivity to the target gas simultaneously. The wireless sensing detection method enables a sensor to make signal reception more convenient. Furthermore, a wireless gas sensor with self‐converging calibration using the advantage of a floating‐gate (FG) transistor to control the charge quantity by shifting the threshold voltage (Vth) of each transistor via the channel hot electron injection effect, which helps to reduce the impact of process variations, minimizing readout errors, is proposed.

Funder

National Science and Technology Council

National Synchrotron Radiation Research Center

Publisher

Wiley

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