Simulating the I‐V characteristics of an ultrathin IGZO ‐based thin film transistor using finite element method-Reference-Cited by-同舟云学术

Simulating the I‐V characteristics of an ultrathin IGZO ‐based thin film transistor using finite element method

Published:2021-09-26 Issue:2 Volume:35 Page:
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int J Numerical Modelling

Author:

Hussien Salma A.¹,Abdellatif Sameh O.¹^ORCID

Affiliation:

1. Electrical Engineering department, Faculty of Engineering and FabLab in the Center for Emerging Learning Technology (CELT) The British University in Egypt (BUE) Cairo Egypt

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jnm.2961

Reference45 articles.

1. Research on the Magnetron Sputtering Performance of Active Matrix Liquid Crystal Display Electronic Materials Based on Amorphous Oxide Thin Film Transistors

2. Removal of tetramethylammonium hydroxide (TMAH) from thin-film transistor liquid crystal display (TFT-LCD) industry wastewater by hydrolysis acidification-aerobic and anaerobic processes

3. Iodide recovery and boron removal from thin-film transistor liquid crystal display wastewater through forward osmosis

4. A novel electronic assay based on a sol-gel transition reaction and a thin-film transistor of supramolecular hydrogels to detect alkaline phosphatase activity

5. Rational surface modification of ZnO with siloxane polymers for room-temperature-operated thin-film transistor-based gas sensors

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