A new technique for the determination of minority-carrier diffusion length by EBIC
Author:
Publisher
Wiley
Subject
Instrumentation,Atomic and Molecular Physics, and Optics
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/sca.4950110106/fullpdf
Reference14 articles.
1. An inverse problem of charge-collection microscopy;Donolato;Inverse Problems,1986
2. Determination of kilovolt electron energy dissipation versus penetration distance in solid materials;Everhart;J Appl Phys,1971
3. A method for investigation of fluctuations in doping concentration and minority carrier diffusion length in semi-conductors by scanning electron microscope;Kamm;Solid State Electr,1976
4. Determination of semiconductor parameters and of the vertical Structure of devices by numerical analysis of energy-dependent EBIC measurements;Kittler;Physi Stat Sol (a),1983
5. Problems and results of diffusion length investigations by energy-dependent EBIC measurements;Kittler;Cryst Res Technol,1985
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electron-Beam-Induced Current and Cathodoluminescence;Springer Series in Optical Sciences;1998
2. EBIC STUDIES OF GETTERING IN SILICON;Defect Control in Semiconductors;1990
3. Monte-Carlo simulation of diffusion length measurements by a wedge absorber in the scanning electron microscope (SEM);Physica Status Solidi (a);1989-12-16
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