Metallurgical interactions at the contacts GaAs interface
Author:
Publisher
Wiley
Subject
Instrumentation,Atomic and Molecular Physics, and Optics
Reference7 articles.
1. Gallium-vacancy-dependent diffusion model of ohmic contacts to GaAs;Gupta;Solid State Electron,1985
2. Shallow ohmic contact to both n- and p-GaAs;Han;J Appl Phys,1993
3. Metallurgical reactions in Au/Ge/Au contact to gallium arsenide;Kim;Proc Mat Res Soc Symp,1987
4. Morphology of Au/GaAs interfaces;Liliental-Weber;Appl Phys Lett,1986
5. Non-alloyed ohmic contact to n-GaAs by solid phase epitaxy;Marshall;Appl Phys Lett,1985
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. PdGe-based ohmic contacts to high-low doped n-GaAs with and without undoped cap layer;Journal of Physics D: Applied Physics;2000-06-23
2. Performance of Pd/Ge/Au/Pd/Au ohmic contacts and its application to GaAs metal-semiconductor field-effect transistors;Solid-State Electronics;1999-10
3. Investigation of the properties of Pd/Ge/Au/Pd/Au ohmic contacts to n-GaAs formed with different ambients;Applied Surface Science;1999-06
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