PdGe-based ohmic contacts to high-low doped n-GaAs with and without undoped cap layer-Reference-Cited by-同舟云学术

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PdGe-based ohmic contacts to high-low doped n-GaAs with and without undoped cap layer

Published:2000-06-23 Issue:13 Volume:33 Page:1611-1614
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Lim Jong-Won,Mun Jae-Kyoung,Nam Sungun,Kwak Myeong-Hyeon,Kim Haecheon,Song Min-Kyu,Ma Dong Sung

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/33/i=13/a=309/pdf

Reference20 articles.

1. Alloyed ohmic contacts to GaAs

2. Electron microscope studies of an alloyed Au/Ni/Au‐Ge ohmic contact to GaAs

3. Microstructure studies of AuNiGe Ohmic contacts to n-type GaAs

4. Non‐alloyed ohmic contact ton‐GaAs by solid phase epitaxy

5. Thermally stable, low‐resistance PdGe‐based ohmic contacts to high–low doped n‐GaAs

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1. GaAs-based resonant tunneling diode: Device aspects from design, manufacturing, characterization and applications;Journal of Semiconductors;2023-10-01

2. Analysis of PdGe-based contact on n-GaSb;AIP Conference Proceedings;2018

3. Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system;Solid-State Electronics;2015-12

4. Mechanisms of current flow in metal-semiconductor ohmic contacts;Semiconductors;2007-11

5. Design and fabrication of pHEMT MMIC switches for IEEE 802.11.a/b/g WLAN applications;Semiconductor Science and Technology;2005-05-23

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