Determination of fixed electron-beam-induced positive oxide charge-Reference-Cited by-同舟云学术

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Determination of fixed electron-beam-induced positive oxide charge

Published:1992 Issue:6 Volume:14 Page:345-349
ISSN:0161-0457
Container-title:Scanning
language:en
Short-container-title:Scanning

Author:

Bernstein G. H.,Polchlopek S. W.,Kamath R.,Porod W.

Funder

ONR, AFOSR, IBM, and the University of Notre Dame

Publisher

Wiley

Subject

Instrumentation,Atomic and Molecular Physics, and Optics

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/sca.4950140606/fullpdf

Reference13 articles.

1. The influence of electron beam energy on defect density in MOS device quality oxides;Balasinski;Vacuum,1988

2. Coating Techniques for SEM and Microanalysis

3. Mechanisms of charge build-up in MOS insulators;Johnson;IEEE Trans Nucl Sci,1975

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1. Generation, relaxation and annealing of Si/SiO2 charges induced by low-energy electron beam;Materials Science and Engineering: B;2021-12

2. Localization of Multiple DNA Sequences on Nanopatterns;ACS Nano;2011-09-14

3. Electron-Beam-Induced Current and Cathodoluminescence;Springer Series in Optical Sciences;1998

4. Novel method for producing nanostructures in silicon inversion layers;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-05

5. Electron beam lithography over large scan fields;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1993-07

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