Electron-beam test on power semiconductor devices
Author:
Publisher
Wiley
Subject
Instrumentation,Atomic and Molecular Physics, and Optics
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/sca.4950100406/fullpdf
Reference17 articles.
1. Summary abstract: Determination of electrical potential as a function of position on semi-insulating polycrystalline silicon thin films using a scanning Auger microprobe;Comizzoli;J Vac Sci Technol,1987
2. Magnetic field extraction of secondary electrons for accurate integrated circuit voltage measurement;Garth;J Vac Sci Technol,1986
3. deJong JL Reimer D Effects of local fields on electron beam voltage measurement accuracy 933 942 1986
4. Menzel E Kubalek E Electron beam test system for VLSI circuit inspections 297 304 1979
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Potential measurements on floating-field-limiting rings in a power MOSFET by an electron beam probe;Semiconductor Science and Technology;1995-03-01
2. Measurement of potential distributions on positive-temperature-coefficient resistors by an electron-beam probe;Measurement Science and Technology;1991-06-01
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