Advanced Multifunctional Field Effect Devices Using Common Gate for Both 2D Transition‐Metal Dichalcogenide and InGaZnO Channels
Author:
Affiliation:
1. van der Waals Materials Research CenterDepartment of Physics and Applied PhysicsYonsei University 50 Yonsei‐ro, Seodaemun‐gu Seoul 03722 Korea
2. Department of PhysicsSogang University 35 Baekbeom‐ro, Mapo‐Gu Seoul 04107 Korea
Funder
Neurosciences Research Foundation
Semiconductor Research Corporation
National Research Foundation of Korea
Publisher
Wiley
Subject
Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201900730
Reference45 articles.
1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
2. Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
3. High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping
4. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
5. Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide
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