High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping-Reference-Cited by-同舟云学术

High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping

Published:2015-05-26 Issue:27 Volume:25 Page:4219-4227
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Kang Dong-Ho¹,Kim Myung-Soo¹,Shim Jaewoo¹,Jeon Jeaho²,Park Hyung-Youl¹,Jung Woo-Shik³,Yu Hyun-Yong⁴,Pang Chang-Hyun⁵,Lee Sungjoo²,Park Jin-Hong¹

Affiliation:

1. School of Electronics and Electrical Engineering; Sungkyunkwan University; Suwon 440-746 South Korea

2. School of Electronics and Electrical Engineering; SKKU Advanced Institute of Nanotechnology (SAINT); Center for Human Interface Nanotechnology (HINT); Sungkyunkwan University; Suwon 440-746 South Korea

3. Department of Electrical Engineering; Stanford University; CA 94305 USA

4. School of Electrical Engineering; Korea University; Seoul 136-701 South Korea

5. School of Chemical Engineering; Sungkyunkwan University; Suwon 440-746 South Korea

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference32 articles.

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4. High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems

5. van der Waals Epitaxial Ultrathin Two-Dimensional Nonlayered Semiconductor for Highly Efficient Flexible Optoelectronic Devices

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