High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping-Reference-Cited by-同舟云学术

High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping

Published:2015-05-26 Issue:27 Volume:25 Page:4219-4227
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Kang Dong-Ho¹,Kim Myung-Soo¹,Shim Jaewoo¹,Jeon Jeaho²,Park Hyung-Youl¹,Jung Woo-Shik³,Yu Hyun-Yong⁴,Pang Chang-Hyun⁵,Lee Sungjoo²,Park Jin-Hong¹

Affiliation:

1. School of Electronics and Electrical Engineering; Sungkyunkwan University; Suwon 440-746 South Korea

2. School of Electronics and Electrical Engineering; SKKU Advanced Institute of Nanotechnology (SAINT); Center for Human Interface Nanotechnology (HINT); Sungkyunkwan University; Suwon 440-746 South Korea

3. Department of Electrical Engineering; Stanford University; CA 94305 USA

4. School of Electrical Engineering; Korea University; Seoul 136-701 South Korea

5. School of Chemical Engineering; Sungkyunkwan University; Suwon 440-746 South Korea

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. All Two-Dimensional, Flexible, Transparent, and Thinnest Thin Film Transistor

2. Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics

3. Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

4. High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems

5. van der Waals Epitaxial Ultrathin Two-Dimensional Nonlayered Semiconductor for Highly Efficient Flexible Optoelectronic Devices

Cited by 263 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Far-Reaching Remote Doping for Monolayer MoS₂ Using a Ferroelectric Substrate: Unveiling the Impact of h-BN Spacer Thickness;ACS Applied Electronic Materials;2024-08-09

2. Innovative Selected Area Doping and Stable Contact for 2D WSe2 Electronics Using Patterned Nafion;2024-07-10

3. Electronic Devices Based on Heterostructures of 2D Materials and Self‐Assembled Monolayers;Small;2024-06-27

4. Monolayer Semiconductor Superlattices with High Optical Absorption;ACS Photonics;2024-06-17

5. Low‐Symmetry 2D t‐InTe for Polarization‐Sensitive UV‐Vis‐NIR Photodetection;Small;2024-05-28