Negative Differential Resistance Transistor with Organic p-n Heterojunction-Reference-Cited by-同舟云学术

Negative Differential Resistance Transistor with Organic p-n Heterojunction

Published:2017-06-19 Issue:8 Volume:3 Page:1700106
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Kobashi Kazuyoshi¹²,Hayakawa Ryoma¹,Chikyow Toyohiro¹,Wakayama Yutaka¹²

Affiliation:

1. International Center for Materials Nanoarchitectonics (WPI-MANA); National Institute for Materials Science (NIMS); 1-1 Namiki Tsukuba 305-0044 Japan

2. Department of Chemistry and Biochemistry; Faculty of Engineering; Kyushu University; 1-1 Namiki Tsukuba 305-0044 Japan

Funder

Japan Society for the Promotion of Science

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference32 articles.

1. New Phenomenon in Narrow Germaniump−nJunctions

2. Resonant tunnelling and fast switching in amorphous-carbon quantum-well structures

3. Large-signal microwave performance of GaN-based NDR diode oscillators

4. Tunneling-based SRAM

5. Negative transconductance and negative differential resistance in a grid‐gate modulation‐doped field‐effect transistor

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