Modeling of Intrinsic Electron and Hole Trapping in Crystalline and Amorphous ZnO-Reference-Cited by-同舟云学术

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Modeling of Intrinsic Electron and Hole Trapping in Crystalline and Amorphous ZnO

Published:2019-11-14 Issue:1 Volume:6 Page:1900760
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Mora‐Fonz David¹^ORCID,Shluger Alexander L.¹^ORCID

Affiliation:

1. Department of Physics and Astronomy University College London Gower Street London WC1E 6BT UK

Funder

Engineering and Physical Sciences Research Council

Leverhulme Trust

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201900760

Reference114 articles.

1. Transparent conductors as solar energy materials: A panoramic review

2. Transparent Conducting Oxides for Photovoltaics: Manipulation of Fermi Level, Work Function and Energy Band Alignment

3. Transparent Conducting Oxides

4. Applications and Processing of Transparent Conducting Oxides

5. Plastic transistors in active-matrix displays

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