Exploring the synergistic effects of aluminum and hydrogen impurities on high-electron-mobility sputtered-ZnO thin films-Reference-Cited by-同舟云学术

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Exploring the synergistic effects of aluminum and hydrogen impurities on high-electron-mobility sputtered-ZnO thin films

Published:2024-02 Issue: Volume:148 Page:114868
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Van Hoang Dung^ORCID,Pham Anh Tuan Thanh^ORCID,Dinh Hanh Duc Thi,Nguyen Truong Huu,Le Thu Bao Nguyen,Ung Thuy Dieu Thi^ORCID,Phan Thang Bach,Cao Tran Vinh^ORCID

Publisher

Elsevier BV

Reference62 articles.

1. Wide bandgap oxide semiconductors: from materials Physics to optoelectronic devices;Shi;Adv. Mater.,2021

2. ITO-free organic solar cells with oxide/metal/oxide multilayer structure cathode;Qian;Org. Electron.,2022

3. PLD of transparent and conductive AZO thin films;Anyanwu;Ceram. Int.,2023

4. Hydrogen roles approaching ideal electrical and optical properties for undoped and Al doped ZnO thin films;Van Hoang;J. Mater.,2022

5. Manipulating the optoelectronic characteristic of AZO films by magnetron sputtering power;Zhao;Vacuum,2023

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