A Theoretical and Experimental View on the Temperature Dependence of the Electronic Conduction through a Schottky Barrier in a Resistively Switching SrTiO3 -Based Memory Cell-Reference-Cited by-同舟云学术

A Theoretical and Experimental View on the Temperature Dependence of the Electronic Conduction through a Schottky Barrier in a Resistively Switching SrTiO3 -Based Memory Cell

Published:2018-06-14 Issue:7 Volume:4 Page:1800062
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Funck Carsten¹,Marchewka Astrid¹,Bäumer Christoph²,Schmidt Peter C.³,Müller Phillip²,Dittmann Regina²,Martin Manfred⁴,Waser Rainer¹²,Menzel Stephan²

Affiliation:

1. Institute of Materials in Electrical Engineering and Information Technology II; RWTH Aachen University; 52056 Aachen Germany

2. Peter Grünberg Institute; Research Center Juelich GmbH and JARA-FIT; 52425 Juelich Germany

3. Eduard-Zintl-Institut; 64287 TU Darmstadt Germany

4. Institute of Physical Chemistry; RWTH Aachen University; 52056 Aachen Germany

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/aelm.201800062/fullpdf

Reference70 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

2. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3

3. Memristive devices for computing

4. Direct Identification of the Conducting Channels in a Functioning Memristive Device

5. Dislocation impact on resistive switching in single-crystal SrTiO3

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