Ultrafast Multilevel Switching in Au/YIG/n-Si RRAM-Reference-Cited by-同舟云学术

Ultrafast Multilevel Switching in Au/YIG/n-Si RRAM

Published:2018-11-19 Issue:2 Volume:5 Page:1800418
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Chen Zhiwei¹,Huang Weichuan¹,Zhao Wenbo¹,Hou Chuangming¹,Ma Chao¹,Liu Chuanchuan¹,Sun Haoyang¹,Yin Yuewei¹,Li Xiaoguang¹²^ORCID

Affiliation:

1. Hefei National Laboratory for Physical Sciences at the Microscale; Department of Physics; and CAS Key Laboratory of Strongly-coupled Quantum Matter Physics; University of Science and Technology of China; Hefei 230026 China

2. Collaborative Innovation Center of Advanced Microstructures; Nanjing 210093 China

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/aelm.201800418/fullpdf

Reference59 articles.

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3. Solid-State Synapse Based on Magnetoelectrically Coupled Memristor

4. Nanoionics‐Enabled Memristive Devices: Strategies and Materials for Neuromorphic Applications

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