150 nm × 200 nm Cross‐Point Hexagonal Boron Nitride‐Based Memristors-Reference-Cited by-同舟云学术

150 nm × 200 nm Cross‐Point Hexagonal Boron Nitride‐Based Memristors

Published:2020-11-16 Issue:12 Volume:6 Page:1900115
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Yuan Bin¹,Liang Xianhu¹,Zhong Liubiao¹,Shi Yuanyuan²,Palumbo Felix³,Chen Shaochuan¹,Hui Fei⁴,Jing Xu¹,Villena Marco A.¹,Jiang Lin¹,Lanza Mario¹^ORCID

Affiliation:

1. Institute of Functional Nano & Soft Materials Collaborative Innovation Center of Suzhou Nano Science & Technology Soochow University 199 Ren‐Ai Road Suzhou 215123 China

2. Andrew and Erna Viterbi Faculty of Electrical Engineering Technion ‐ Israel Institute of Technology Haifa 32000 Israel

3. National Scientific and Technical Research Council (CONICET) UTN‐CNEA Godoy Cruz 2290 Buenos Aires Argentina

4. Department of Materials Science and Engineering Technion – Israel Institute of Technology Haifa 32000 Israel

Funder

Ministry of Education of the People's Republic of China

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201900115

Reference47 articles.

1. A review of emerging non-volatile memory (NVM) technologies and applications

2. Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

3. Neuromorphic computing using non-volatile memory

4. Resistive Switching

5. Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structure

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical occurrence of quantized chemistry of conduction mechanism in layered perovskite for the application of Resistive Random Access Memory devices;International Journal of Quantum Chemistry;2023-11-06

2. Hardware Implementation of Network Connectivity Relationships Using 2D hBN‐Based Artificial Neuron and Synaptic Devices;Advanced Functional Materials;2023-11-05

3. The role of oxygen incorporation in Ni (111) substrates on the growth of hexagonal boron nitride monolayers;Nanotechnology;2023-10-05

4. Wet‐Etching‐Boosted Charge Storage in 1D Nitride‐Based Systems for Imitating Biological Synaptic Behaviors;Advanced Functional Materials;2023-09-15

5. Non-stoichiometric WO3−x-based nanoscale memristor for high-density memory;AIP Advances;2023-08-01