Comprehensive Writing Margin Analysis and its Application to Stacked one Diode-One Memory Device for High-Density Crossbar Resistance Switching Random Access Memory-Reference-Cited by-同舟云学术

Comprehensive Writing Margin Analysis and its Application to Stacked one Diode-One Memory Device for High-Density Crossbar Resistance Switching Random Access Memory

Published:2016-09-16 Issue:10 Volume:2 Page:1600326
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Yoon Kyung Jean¹,Bae Woorham²,Jeong Deog-Kyoon²,Hwang Cheol Seong¹

Affiliation:

1. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center; Seoul National University; Gwanak-ro 1 Daehag-dong, Gwanak-gu Seoul 151-744 South Korea

2. Department of Electrical and Computer Engineering and Inter-University Semiconductor Research Center; Seoul National University; Gwanak-ro 1 Daehag-dong, Gwanak-gu Seoul 151-744 South Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Reproducible switching effect in thin oxide films for memory applications

2. Prospective of Semiconductor Memory Devices: from Memory System to Materials

3. A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

4. Crossbar RRAM Arrays: Selector Device Requirements During Read Operation

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