Gate-Free Controlled Multibit Memories Based on Individual ZnO:In Micro/Nanowire Back-to-Back Diodes-Reference-Cited by-同舟云学术

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Gate-Free Controlled Multibit Memories Based on Individual ZnO:In Micro/Nanowire Back-to-Back Diodes

Published:2016-02-08 Issue:4 Volume:2 Page:1500395
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Zhao Jie¹,Cheng Baochang¹²,Xiao Yanhe¹,Guo Rui¹,Lei Shuijin¹

Affiliation:

1. School of Materials Science and Engineering; Nanchang University; Jiangxi 330031 P. R. China

2. Nanoscale Science and Technology Laboratory; Institute for Advanced Study; Nanchang University; Jiangxi 330031 P. R. China

Funder

National Natural Science Foundation of China

Project for Young Scientist Training of Jiangxi Province

Major Program of Natural Science Foundation of Jiangxi Province

Foundation of Jiangxi Educational Commission

Innovation Fund Designated for Graduate Students of Jiangxi Province

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference49 articles.

1. Integrated nanoelectronics for the future

2. An on-chip electrical transport spectroscopy approach for in situ monitoring electrochemical interfaces

3. Graphene nanoelectronic heterodyne sensor for rapid and sensitive vapour detection

4. Coaxial silicon nanowires as solar cells and nanoelectronic power sources

5. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

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3. A surface photovoltaic effect-related high-performance photodetector based on a single CH3NH3PbI3 micro/nanowire;Journal of Materials Chemistry C;2020

4. Bias-Controlled Tunable Electronic Transport with Memory Characteristics in an Individual ZnO Nanowire for Realization of a Self-Driven UV Photodetector with Two Symmetrical Electrodes;ACS Applied Materials & Interfaces;2019-03-28

5. Controllable switching properties in an individual CH3NH3PbI3 micro/nanowire-based transistor for gate voltage and illumination dual-driving non-volatile memory;Journal of Materials Chemistry C;2019

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