Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches-Reference-Cited by-同舟云学术

Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches

Published:2018-01-03 Issue:3 Volume:4 Page:1700461
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Zhang Yu¹²,Lin Xiaoyang¹,Adam Jean-Paul²,Agnus Guillaume²,Kang Wang¹,Cai Wenlong¹,Coudevylle Jean-Rene²,Isac Nathalie²,Yang Jianlei¹,Yang Huaiwen¹,Cao Kaihua¹³,Cui Hushan¹³,Zhang Deming¹,Zhang Youguang¹,Zhao Chao¹³,Zhao Weisheng¹,Ravelosona Dafine²

Affiliation:

1. Fert Beijing Institute; BDBC Beihang University; Beijing 100191 China

2. Centre de Nanosciences et de Nanotechnologies; University of Paris-Sud; Université Paris-Saclay; Orsay 91405 France

3. Institute of Microelectronics; Chinese Academy of Sciences; Beijing 100029 China

Funder

China Scholarship Council

National Natural Science Foundation of China

Beijing Municipal of Science and Technology

International Collaboration

Publisher

Wiley

Subject