Tuning Ultrafast Photoinduced Strain in Ferroelectric‐Based Devices-Reference-Cited by-同舟云学术

Tuning Ultrafast Photoinduced Strain in Ferroelectric‐Based Devices

Published:2019-05-02 Issue:6 Volume:5 Page:1800709
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Matzen Sylvia¹^ORCID,Guillemot Loïc¹,Maroutian Thomas¹,Patel Sheena K. K.²³,Wen Haidan⁴,DiChiara Anthony D.⁴,Agnus Guillaume¹,Shpyrko Oleg G.³,Fullerton Eric E.²,Ravelosona Dafiné¹,Lecoeur Philippe¹,Kukreja Roopali⁵

Affiliation:

1. Center for Nanoscience and Nanotechnology (C2N) UMR CNRS – University of Paris‐Sud 10 boulevard Thomas Gobert 91120 Palaiseau France

2. Center for Memory and Recording Research University of California‐San Diego La Jolla CA 92093‐0401 USA

3. Department of Physics University of California‐San Diego La Jolla CA 92093‐0317 USA

4. Advanced Photon Source Argonne National Laboratory Argonne IL 60439 USA

5. Department of Materials Science and Engineering University of California Davis Davis CA 95616 USA

Funder

U.S. Department of Energy

National Science Foundation

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201800709

Reference22 articles.

1. Ferroelectric Field Effect Transistors for Memory Applications

2. Physics of thin-film ferroelectric oxides

3. Ferroelectric thin films: Review of materials, properties, and applications

4. Ferroelectric thin films for micro-sensors and actuators: a review

5. Photovoltaics with Ferroelectrics: Current Status and Beyond

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