Asymmetric Resistive Switching Dynamics in BaTiO3 Tunnel Junctions-Reference-Cited by-同舟云学术

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Asymmetric Resistive Switching Dynamics in BaTiO3 Tunnel Junctions

Published:2018-11-14 Issue:1 Volume:5 Page:1800407
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Qian Mengdi¹,Fina Ignasi¹,Sánchez Florencio¹,Fontcuberta Josep¹

Affiliation:

1. Institut de Ciència de Materials de Barcelona (ICMAB-CSIC); Campus UAB Bellaterra 08193 Catalonia Spain

Funder

Programme for Centres of Excellence in R&D

Generalitat de Catalunya

China Scholarship Council

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/aelm.201800407/fullpdf

Reference43 articles.

1. Ferroelectric tunnel junctions for information storage and processing

2. Tunneling Across a Ferroelectric

3. Ferroelectric and multiferroic tunnel junctions

4. Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions

5. Giant Electroresistance of Super-tetragonal BiFeO3-Based Ferroelectric Tunnel Junctions

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced Electro‐Resistance and Tunable Asymmetric Depolarization Behavior in Hf_0.5Zr_0.5O₂ Ferroelectric Tunnel Junction by Bottom Oxide Interfacial Layer;Advanced Electronic Materials;2024-09-08

2. Multiferroic and ferroelectric phases revealed in 2D Ti3C2Tx MXene film for high performance resistive data storage devices;npj 2D Materials and Applications;2023-02-03

3. Polarization controlled resistive switching in bulk ferroelectric ceramics: A universal phenomenon;Journal of Alloys and Compounds;2021-12

4. Comprehensive Model of Electron Conduction in Oxide-Based Memristive Devices;ACS Applied Electronic Materials;2021-09-07

5. Polarization and Resistive Switching in Epitaxial 2 nm Hf0.5Zr0.5O2 Tunnel Junctions;ACS Applied Electronic Materials;2021-08-12

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