Electrical and Optical Properties of VO2 Polymorphic Films Grown Epitaxially on Y-Stabilized ZrO2-Reference-Cited by-同舟云学术

Electrical and Optical Properties of VO2 Polymorphic Films Grown Epitaxially on Y-Stabilized ZrO2

Published:2018-04-30 Issue:6 Volume:4 Page:1700620
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Choi Songhee¹,Chang Sung-Jin²,Oh Junhyeob³,Jang Jae Hyuck³,Lee Shinbuhm¹^ORCID

Affiliation:

1. Department of Emerging Materials Science; Daegu-Gyeongbuk Institute of Science and Technology; Daegu 42988 Republic of Korea

2. Center for Correlated Electron Systems; Institute for Basic Science and Department of Physics and Astronomy; Seoul National University; Seoul 08826 Republic of Korea

3. Electron Microscopy Research Center; Korea Basic Science Institute; Daejeon 34133 Republic of Korea

Funder

Daegu Gyeongbuk Institute of Science and Technology

Ministry of Science, ICT and Future Planning

Korea Basic Science Institute

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference26 articles.

1. The two components of the crystallographic transition in VO2

2. Metal-insulator transition in vanadium dioxide

3. Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory

4. Origin of variation in switching voltages in threshold-switching phenomena of VO2 thin films

5. A 1D Vanadium Dioxide Nanochannel Constructed via Electric-Field-Induced Ion Transport and its Superior Metal-Insulator Transition

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