Novel Selector‐Induced Current‐Limiting Effect through Asymmetry Control for High‐Density One‐Selector–One‐Resistor Crossbar Arrays-Reference-Cited by-同舟云学术

Novel Selector‐Induced Current‐Limiting Effect through Asymmetry Control for High‐Density One‐Selector–One‐Resistor Crossbar Arrays

Published:2019-05-24 Issue:7 Volume:5 Page:1800806
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Kim Yumin¹,Kwon Young Jae¹,Kim Jihun¹,An Cheol Hyun¹,Park Taegyun¹,Kwon Dae Eun¹,Woo Hyo Cheon¹,Kim Hae Jin¹,Yoon Jung Ho¹²,Hwang Cheol Seong¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Inter‐University Semiconductor Research CenterSeoul National University Gwanak‐ro 1, Daehag‐dong, Gwanak‐gu Seoul 151‐744 Republic of Korea

2. Samsung Advanced Institute of TechnologySamsung Electronics 130 Samsung‐ro, Yeongtong‐gu Suwon 16678 Republic of Korea

Funder

Korea Institute of Science and Technology

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201800806

Reference31 articles.

1. 32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory

2. High-Density Crossbar Arrays Based on a Si Memristive System

3. A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications

4. A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

5. Engineering nonlinearity into memristors for passive crossbar applications

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