Films Stoichiometry Effects on the Electronic Transport Properties of Solution‐Processed Yttrium Doped Indium–Zinc Oxide Crystalline Semiconductors for Thin Film Transistor Applications-Reference-Cited by-同舟云学术

Films Stoichiometry Effects on the Electronic Transport Properties of Solution‐Processed Yttrium Doped Indium–Zinc Oxide Crystalline Semiconductors for Thin Film Transistor Applications

Published:2020-03-03 Issue:4 Volume:6 Page:1900976
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Afouxenidis Dimitrios¹,Halcovitch Nathan R.²,Milne William I.³,Nathan Arokia³⁴,Adamopoulos George¹^ORCID

Affiliation:

1. Engineering DepartmentLancaster University Lancaster LA1 4YR UK

2. Department of ChemistryLancaster University Lancaster LA1 4YB UK

3. Department of EngineeringUniversity of Cambridge 9 JJ Thomson Avenue Cambridge CB3 0FA UK

4. Prof. A. NathanCambridge Touch Technologies Cambridge CB4 0GN UK

Funder

Leverhulme Trust

Royal Academy of Engineering

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201900976

Reference110 articles.

1. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

3. Photoreduction and oxidation of as‐deposited microcrystalline indium oxide

4. Synthesis of Novel Thin-Film Materials by Pulsed Laser Deposition

5. Atomic Layer Deposition of Indium Tin Oxide Thin Films Using Nonhalogenated Precursors

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Compositional Engineering of Hf‐Doped InZnSnO Films for High‐Performance and Stability Amorphous Oxide Semiconductor Thin Film Transistors;Advanced Electronic Materials;2021-04-19