An Electric‐Field‐Controlled High‐Speed Coexisting Multibit Memory and Boolean Logic Operations in Manganite Nanowire via Local Gating-Reference-Cited by-同舟云学术

An Electric‐Field‐Controlled High‐Speed Coexisting Multibit Memory and Boolean Logic Operations in Manganite Nanowire via Local Gating

Published:2019-03-28 Issue:6 Volume:5 Page:1900020
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Shi Qian¹,Jiang Fengxian²,Yu Yang¹,Lin Hanxuan¹,Kou Yunfang¹,Miao Tian¹,Liu Hao¹,Yang Wenting¹,Wang Wenbin³,Cai Peng¹,Xu Xiaohong²,Guo Hangwen³,Yin Lifeng¹³⁴,Shen Jian¹³⁴^ORCID

Affiliation:

1. State Key Laboratory of Surface Physics and Department of PhysicsFudan University Shanghai 200433 China

2. School of Chemistry and Materials ScienceShanxi Normal University Linfen 041004 China

3. Institute for Nanoelectronics Devices and Quantum ComputingFudan University Shanghai 200433 China

4. Collaborative Innovation Center of Advanced Microstructures Nanjing 210093 China

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Natural Science Foundation of Shanghai

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201900020

Reference35 articles.

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5. Memristive devices for computing

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