Improved Charge Injection of Metal Oxide Thin-Film Transistors by Stacked Electrodes of Indium Tin Oxide Nanoparticles and Silver Nanowires-Reference-Cited by-同舟云学术

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Improved Charge Injection of Metal Oxide Thin-Film Transistors by Stacked Electrodes of Indium Tin Oxide Nanoparticles and Silver Nanowires

Published:2018-01-25 Issue:4 Volume:4 Page:1700440
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Kim Chaewon¹,Kim Yong-Hoon²,Noh Yong-Young³,Hong Sung-Jei⁴,Lee Mi Jung¹^ORCID

Affiliation:

1. School of Advanced Materials Engineering; Kookmin University; Seoul 02707 South Korea

2. School of Advanced Materials Science and Engineering; Sungkyunkwan University; Suwon Gyeonggo-do 16419 South Korea

3. Department of Energy and Materials Engineering; Dongguk University; Seoul 04620 South Korea

4. Display Materials and Components Research Center; Korea Electronics Technology Institute; Seongnam 13509 South Korea

Funder

National Research Foundation of Korea

Korea Institute of Energy Technology Evaluation and Planning

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference48 articles.

1. Electronic Structure of Low‐Temperature Solution‐Processed Amorphous Metal Oxide Semiconductors for Thin‐Film Transistor Applications

2. High-performance fully amorphous bilayer metal-oxide thin film transistors using ultra-thin solution-processed ZrOx dielectric

3. Highly Effective Field-Effect Mobility Amorphous InGaZnO TFT Mediated by Directional Silver Nanowire Arrays

4. High performance solution-processed amorphous zinc tin oxide thin film transistor

5. Compositional influence on sol-gel-derived amorphous oxide semiconductor thin film transistors

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1. Reliable measurement of the density of states including occupied in-gap states of an amorphous In–Ga–Zn–O thin film via photoemission spectroscopies: Direct observation of light-induced in-gap states;Journal of Applied Physics;2024-02-23

2. Charge Transport Advancement in Anti‐Ambipolar Transistors: Spatially Separating Layer Sandwiched between N‐Type Metal Oxides and P‐Type Small Molecules;Advanced Functional Materials;2024-02-22

3. Homojunction Interface Boosts Hole-Carrier Injection in p-Type CuI Nanoribbon Field-Effect Transistors;ACS Applied Electronic Materials;2024-02-19

4. Towards enhanced transparent conductive nanocomposites based on metallic nanowire networks coated with metal oxides: a brief review;Journal of Materials Chemistry A;2024

5. Experimental and Theoretical Evidence of Charge Injection Barrier Control by Small-Molecular Charge Injection Layer and Its Effects on Organic–Inorganic Complementary Inverters;IEEE Transactions on Electron Devices;2023-04

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