Flexible, Temperature‐Stable, and Fatigue‐Endurable PbZr 0.52 Ti 0.48 O 3 Ferroelectric Film for Nonvolatile Memory-Reference-Cited by-同舟云学术

Flexible, Temperature‐Stable, and Fatigue‐Endurable PbZr 0.52 Ti 0.48 O 3 Ferroelectric Film for Nonvolatile Memory

Published:2019-07-22 Issue:10 Volume:5 Page:1900443
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Yang Changhong¹^ORCID,Han Yajie¹,Qian Jin¹,Cheng Zhenxiang²

Affiliation:

1. School of Materials Science and Engineering University of Jinan Jinan 250022 China

2. Institute for Superconducting and Electronic Materials Australian Institute for Innovative Materials University of Wollongong Innovation Campus North Wollongong NSW 2500 Australia

Funder

Natural Science Foundation of Shandong Province

Australian Research Council

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201900443

Reference40 articles.

1. Ultra-thin chips for high-performance flexible electronics

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3. The path to ubiquitous and low-cost organic electronic appliances on plastic

4. Flexible light-emitting diodes made from soluble conducting polymers

5. Flexible Free-Standing III-Nitride Thin Films for Emitters and Displays

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