Amorphous Spiro‐OMeTAD Prepared Flexible Films with Surface Engineering Boost Ternary Resistive Memory Yield to 86%-Reference-Cited by-同舟云学术

Amorphous Spiro‐OMeTAD Prepared Flexible Films with Surface Engineering Boost Ternary Resistive Memory Yield to 86%

Published:2019-04-18 Issue:6 Volume:5 Page:1800964
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Zhao Yong‐Yan¹,Sun Wu‐Ji¹,He Jing‐Hui¹,Lu Jian‐Mei¹^ORCID

Affiliation:

1. College of ChemistryChemical Engineering and Materials ScienceCollaborative Innovation Center of Suzhou Nano Science and TechnologyNational‐Local Joint Engineering Laboratory for Absorptive Materials and Technologies in Environmental ProtectionNational Center for International Research on Intelligent Nano‐Materials and Detection Technologies in Environmental ProtectionSoochow University Suzhou 215123 P. R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201800964

Reference46 articles.

1. The International Technology Roadmap for Semiconductors (ITRS) http://www.itrs2.net/itrs‐reports.html(accessed: August2018).

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3. Programmable polymer thin film and non-volatile memory device