Origin of High Electronic Quality in Structurally Disordered CH3NH3PbI3and the Passivation Effect of Cl and O at Grain Boundaries-Reference-Cited by-同舟云学术

Origin of High Electronic Quality in Structurally Disordered CH3NH3PbI3and the Passivation Effect of Cl and O at Grain Boundaries

Published:2015-04-21 Issue:6 Volume:1 Page:1500044
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Yin Wan-Jian¹²,Chen Hangyan³,Shi Tingting¹,Wei Su-Huai²,Yan Yanfa¹

Affiliation:

1. Department of Physics & Astronomy and Wright Center for Photovoltaics Innovation and Commercialization; The University of Toledo; Toledo OH 43606 USA

2. National Renewable Energy Laboratory; Golden CO 80401 USA

3. Department of Chemical and Petroleum Engineering; University of Pittsburgh; PA 15213 USA

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/aelm.201500044/fullpdf

Reference57 articles.

1. Organometal Halide Perovskites as Visible-Light Sensitizers for Photovoltaic Cells

2. Sequential deposition as a route to high-performance perovskite-sensitized solar cells

3. Efficient planar heterojunction perovskite solar cells by vapour deposition

4. Low trap-state density and long carrier diffusion in organolead trihalide perovskite single crystals

5. Electron-hole diffusion lengths > 175 μm in solution-grown CH 3 NH 3 PbI 3 single crystals

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