Voltage Control of Perpendicular Exchange Bias in Multiferroic Heterostructures-Reference-Cited by-同舟云学术

Voltage Control of Perpendicular Exchange Bias in Multiferroic Heterostructures

Published:2019-06-07 Issue:7 Volume:5 Page:1900192
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Yang Qu¹,Hu Zhongqiang¹,Zhang Yao¹,Su Wei¹,Cheng YuXin¹,Peng Bin¹,Wu Jingen¹,Zhou Ziyao¹,He Yun²,Cui Wanzhao²,Wang Zhiguang¹,Liu Ming¹^ORCID

Affiliation:

1. Electronic Materials Research LaboratoryKey Laboratory of the Ministry of EducationSchool of Electronic and Information EngineeringState Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong University Xi'an 710049 China

2. National Key Laboratory of Science and Technology on Space MicrowaveChina Academy of Space Technology (Xi'an) Xi'an 710100 China

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201900192

Reference64 articles.

1. Electrical Control of the Exchange Spring in Antiferromagnetic Metals

2. Effect of mechanical strain on magnetic properties of flexible exchange biased FeGa/IrMn heterostructures

3. Exchange biasing of magnetoelectric composites

4. Magnetoelectric Coupling Effects in Multiferroic Complex Oxide Composite Structures

5. Voltage-Induced Ferromagnetic Resonance in Magnetic Tunnel Junctions

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