Chemical Doping Effects on CVD-Grown Multilayer MoSe2 Transistor-Reference-Cited by-同舟云学术

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Chemical Doping Effects on CVD-Grown Multilayer MoSe2 Transistor

Published:2018-04-14 Issue:6 Volume:4 Page:1700639
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Yoo Hocheon¹,Hong Seongin²,Moon Hyunseong²,On Sungmin¹,Ahn Hyungju³,Lee Han-Koo³,Kim Sunkook²,Hong Young Ki²,Kim Jae-Joon¹

Affiliation:

1. Department of Creative IT Engineering; Pohang University of Science and Technology; Pohang 790-784 Republic of Korea

2. Multi-Functional Nano/Bio Electronics Lab; Sungkyunkwan University; Suwon 440-746 Republic of Korea

3. Pohang Accelerator Laboratory; Pohang 790-784 Republic of Korea

Funder

Ministry of Science, ICT and Future Planning

National Research Foundation of Korea

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference40 articles.

1. Flexible Flat Panel Displays

2. Low-Power Flexible Organic Light-Emitting Diode Display Device

3. Organic light-emitting diodes (OLEDs)

4. High-Detectivity Multilayer MoS2Phototransistors with Spectral Response from Ultraviolet to Infrared

5. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

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1. Ultra-thin vertical tft photosensor and photosynapse based on au-doped- graphene under transition metal selenide reaction;Journal of Materials Science & Technology;2024-06

2. Annealing and Doping Effects on Transition Metal Dichalcogenides—Based Devices: A Review;Coatings;2023-08-03

3. A Thrifty Liquid-Phase Exfoliation (LPE) of MoSe2 and WSe2 Nanosheets as Channel Materials for FET Application;Journal of Electronic Materials;2023-02-06

4. First-Principles Study of the Origin of the Distinct Conductivity Type of Monolayer MoSe₂ and WSe₂;The Journal of Physical Chemistry C;2022-09-19

5. Robust n-type doping of WSe2 enabled by controllable proton irradiation;Nano Research;2022-08-27

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