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Optimization of Electronic Domain-Wall Properties by Aliovalent Cation Substitution

  • Published:2015-12-08 Issue:1 Volume:2 Page:1500195
  • ISSN:2199-160X
  • Container-title:Advanced Electronic Materials
  • language:en
  • Short-container-title:Adv. Electron. Mater.

Author:

Schaab Jakob1,Cano Andres2,Lilienblum Martin1,Yan Zewu3,Bourret Edith3,Ramesh Ramamoorthy4,Fiebig Manfred1,Meier Dennis1

Affiliation:

1. Department of Materials; ETH Zürich; 8093 Zurich Switzerland

2. CNRS; Univ. Bordeaux; ICMCB, UPR 9048; F-33600 Pessac France

3. Materials Science Division; Lawrence Berkeley National Laboratory; CA 94720 USA

4. Department of Materials Science and Engineering and Department of Physics; University of California; Berkeley CA 94720 USA

Funder

U.S. Department of Energy

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Cited by 37 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Topological magnetic and ferroelectric systems for reservoir computing;Nature Reviews Physics;2024-06-25

2. Fundamental Aspects of Conduction in Charged ErMnO3 Domain Walls;Advanced Electronic Materials;2024-04-22

3. Ferroelectric Domain Wall Memory and Logic;ACS Applied Electronic Materials;2023-08-22

4. Neuromorphic functionality of ferroelectric domain walls;Neuromorphic Computing and Engineering;2023-05-11

5. The Third Dimension of Ferroelectric Domain Walls;Advanced Materials;2022-08-05
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