Defining Switching Efficiency of Multilevel Resistive Memory with PdO as an Example-Reference-Cited by-同舟云学术

Defining Switching Efficiency of Multilevel Resistive Memory with PdO as an Example

Published:2016-01-08 Issue:2 Volume:2 Page:1500286
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Rao K. D. M.¹,Sagade Abhay A.¹,John Robin²,Pradeep T.²,Kulkarni G. U.³

Affiliation:

1. Chemistry & Physics of Materials Unit and Thematic Unit of Excellence in Nanochemistry; Jawaharlal Nehru Centre for Advanced Scientific Research; Jakkur P.O; Bangalore 560 064 India

2. DST Unit of Nanoscience and Thematic unit of Excellence; Department of Chemistry; Indian Institute of Technology Madras; Chennai 600036 India

3. Centre for Nano and Soft Matter Sciences; Jalahalli Bangalore 560 013 India

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/aelm.201500286/fullpdf

Reference58 articles.

1. Who Wins the Nonvolatile Memory Race?

2. Nanoionics-based resistive switching memories

3. Int. Technol. Roadmap Semicond. (ITRS)

4. Highly Compact (4F2) and Well Behaved Nano-Pillar Transistor Controlled Resistive Switching Cell for Neuromorphic System Application

5. A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

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