Defect and Dopant Mediated Thermoelectric Power Factor Tuning in β‐Zn 4 Sb 3-Reference-Cited by-同舟云学术

Defect and Dopant Mediated Thermoelectric Power Factor Tuning in β‐Zn 4 Sb 3

Published:2020-02-13 Issue:4 Volume:6 Page:1901284
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Karthikeyan Vaithinathan¹,Li Tan¹,Medasani Bharat²,Luo Caiqin³,Shi Dongliang⁴,Wong Joseph C. K.⁵,Lam Kwok‐Ho⁴,Ling Francis C. C.³,Roy Vellaisamy A. L.⁶^ORCID

Affiliation:

1. Department of Materials Science and Engineering and State Key Laboratory of Terahertz and Millimeter WavesCity University of Hong Kong Kowloon Tong Hong Kong

2. Delaware Energy InstituteUniversity of Delaware Newark DE 19716 USA

3. Department of PhysicsThe University of Hong Kong Pokfulam Road Hong Kong

4. Department of Electrical EngineeringThe Hong Kong Polytechnic University Kowloon Hong Kong

5. Department of Architecture and Civil EngineeringCity University of Hong Kong Kowloon Tong Hong Kong

6. James Watt School of EngineeringUniversity of Glasgow Glasgow G12 8QQ UK

Funder

City University of Hong Kong

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

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