Universal Magnetic Hall Circuit Based on Paired Spin Heterostructures-Reference-Cited by-同舟云学术

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Universal Magnetic Hall Circuit Based on Paired Spin Heterostructures

Published:2015-05-15 Issue:6 Volume:1 Page:1400054
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Zhang Shilei¹,Baker Alexander A.¹,Zhang Jing-Yan²,Yu Guanghua²,Wang Shouguo³,Hesjedal Thorsten¹

Affiliation:

1. Department of Physics; Clarendon Laboratory; University of Oxford; Oxford OX1 3PU UK

2. Department of Materials Physics and Chemistry; University of Science and Technology Beijing; Beijing 100083 P.R. China

3. State Key Laboratory of Magnetism; Institute of Physics; Chinese Academy of Sciences; Beijing 100190 P.R. China

Funder

Natural Science Foundation of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions

2. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

3. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions

4. Development of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip

5. Programmable computing with a single magnetoresistive element

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3. Study on Multi-Field Manipulation in Hall Balance;Acta Physica Sinica;2021

4. Giant Perpendicular Magnetic Anisotropy in Mo‐Based Double‐Interface Free Layer Structure for Advanced Magnetic Tunnel Junctions;Advanced Electronic Materials;2020-07-15

5. Synthesis and cytotoxic evaluation of benzoxazole/benzothiazole-2-imino-coumarin hybrids and their coumarin analogues as potential anticancer agents;PHARMAZIE;2019

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