Wafer Scale Mapping and Statistical Analysis of Radio Frequency Characteristics in Highly Uniform CVD Graphene Transistors-Reference-Cited by-同舟云学术

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Wafer Scale Mapping and Statistical Analysis of Radio Frequency Characteristics in Highly Uniform CVD Graphene Transistors

Published:2019-02-13 Issue:4 Volume:5 Page:1800711
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Tian Mengchuan¹,Hu Ben¹,Yang Haifang²,Tang Chengchun²,Wang Mengfei¹,Gao Qingguo¹,Xiong Xiong¹,Zhang Zhenfeng¹,Li Tiaoyang¹,Li Xuefei¹,Gu Changzhi²,Wu Yanqing¹^ORCID

Affiliation:

1. Wuhan National High Magnetic Field Center and School of Optical and Electronic InformationHuazhong University of Science and Technology Wuhan 430074 China

2. Institute of Physics & University of Chinese Academy of SciencesChinese Academy of Sciences Beijing 100190 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201800711

Reference37 articles.

1. Ultrahigh electron mobility in suspended graphene

2. Velocity saturation in intrinsic graphene

3. High-frequency, scaled graphene transistors on diamond-like carbon

4. State-of-the-Art Graphene High-Frequency Electronics

5. Quasi-free-standing bilayer epitaxial graphene field-effect transistors on 4H-SiC (0001) substrates

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1. A batch preparation of large-size graphite plate/SiC coating by CVD: CFD simulation and experimental;Ceramics International;2024-05

2. Emerging memory electronics for non-volatile radiofrequency switching technologies;Nature Reviews Electrical Engineering;2024-01-11

3. Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress;Advanced Functional Materials;2023-10-11

4. Investigating the Device Performance Variation of a Buried Locally Gated Al/Al2O3 Graphene Field-Effect Transistor Process;Applied Sciences;2023-06-16

5. In-plane gate graphene transistor with epitaxially grown molybdenum disulfide passivation layers;Scientific Reports;2023-06-06

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