Double Gate PbS Quantum Dot Field-Effect Transistors for Tuneable Electrical Characteristics-Reference-Cited by-同舟云学术

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Double Gate PbS Quantum Dot Field-Effect Transistors for Tuneable Electrical Characteristics

Published:2016-02-02 Issue:4 Volume:2 Page:1500467
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Shulga Artem G.¹,Piveteau Laura²³,Bisri Satria Z.¹,Kovalenko Maksym V.²³,Loi Maria A.¹

Affiliation:

1. Zernike Institute for Advanced Materials; University of Groningen; Nijenborgh 4 Groningen 9747 AG The Netherlands

2. Department of Chemistry and Applied Biosciences; ETH Zürich; Vladimir Prelog Weg 1 Zürich 8093 Switzerland

3. Empa-Swiss Federal Laboratories for Materials Science and Technology; Überlandstrasse, 129 Dübendorf 8600 Switzerland

Funder

European Research Council

Hybrid solution processable materials for optoelectronic devices

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/aelm.201500467/fullpdf

Reference45 articles.

1. Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications

2. High-efficiency quantum-dot light-emitting devices with enhanced charge injection

3. Outlook and Emerging Semiconducting Materials for Ambipolar Transistors

4. Band-like transport, high electron mobility and high photoconductivity in all-inorganic nanocrystal arrays

5. Determination of the Electronic Energy Levels of Colloidal Nanocrystals using Field-Effect Transistors and Ab-Initio Calculations

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