High‐Performance Proximity Sensors with Nanogroove‐Template‐Enhanced Extended‐Gate Field‐Effect Transistor Configuration-Reference-Cited by-同舟云学术

High‐Performance Proximity Sensors with Nanogroove‐Template‐Enhanced Extended‐Gate Field‐Effect Transistor Configuration

Published:2019-08-27 Issue:12 Volume:5 Page:1900586
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Liu Weilin¹,Niu Yixue¹,Chen Qiusong¹,Jiang Hanxiao¹,Xu Fan¹,Zhu Guodong¹²^ORCID

Affiliation:

1. Department of Materials SciencesFudan University Shanghai 200433 China

2. Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology Shanghai 200433 China

Funder

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201900586

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