Dry Lithography Patterning of Monolayer Flexible Field Effect Transistors by 2D Mica Stamping

Abstract

AbstractOrganic field‐effect transistors (OFETs) based on 2D monolayer organic semiconductors (OSC) have demonstrated promising potentials for various applications, such as light emitting diode (LED) display drivers, logic circuits, and wearable electrocardiography (ECG) sensors. To date, the fabrications of this class of highly crystallized 2D organic semiconductors (OSC) are dominated by solution shearing. As these organic active layers are only a few molecular layers thick, their compatibilities with conventional thermal evaporated top electrodes or sophisticated photolithography patterning are very limited, which also restricts their device density. Here, an electrode transfer stamp and a semiconductor patterning stamp are developed to fabricate OFETs with channel lengths down to 3 µm over a large area without using any chemicals or causing any damage to the active layer. 2D 2,9‐didecyldinaphtho[2,3‐b:2′,3′‐f]thieno[3,2‐b]thiophene (C10‐DNTT) monolayer OFETs developed by this new approach shows decent performance properties with a low threshold voltage (VTH) less than 0.5 V, intrinsic mobility higher than 10 cm2 V−1 s−1 and a subthreshold swing (SS) less than 100 mV dec−1. The proposed patterning approach is completely comparable with ultraflexible parylene substrate less than 2 µm thick. By further reducing the channel length down to 2 µm and using the monolayer OFET in an AC/DC rectifying circuit, the measured cutoff frequency is up to 17.3 MHz with an input voltage of 4 V. The newly proposed electrode transfer and patterning stamps have addressed the long‐lasting compatibility problem of depositing electrodes onto 2D organic monolayer and the semiconductor patterning. It opens a new path to reduce the fabrication cost and simplify the manufacturing process of high‐density OFETs for more advanced electronic or biomedical applications.