An Annealing Accelerator for Ising Spin Systems Based on In‐Memory Complementary 2D FETs-Reference-Cited by-同舟云学术

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An Annealing Accelerator for Ising Spin Systems Based on In‐Memory Complementary 2D FETs

Published:2021-12-10 Issue:4 Volume:34 Page:2107076
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Advanced Materials

Author:

Sebastian Amritanand¹,Das Sarbashis²,Das Saptarshi¹³⁴^ORCID

Affiliation:

1. Deparment of Engineering Science and Mechanics Penn State University University Park PA 16802 USA

2. Department of Electrical Engineering Penn State University University Park PA 16802 USA

3. Department of Materials Science and Engineering Penn State University University Park PA 16802 USA

4. Materials Research Institute Pennsylvania State University University Park PA 16802 USA

Funder

Army Research Office

National Science Foundation

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202107076

Reference47 articles.

1. A distributed implementation of simulated annealing for the travelling salesman problem

2. A new grouping genetic algorithm approach to the multiple traveling salesperson problem

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