Ultra-scaled phototransistors based on monolayer MoS2-Reference-Cited by-同舟云学术

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Ultra-scaled phototransistors based on monolayer MoS2

Published:2023-10 Issue:4 Volume:1 Page:100102
ISSN:2666-9986
Container-title:Device
language:en
Short-container-title:Device

Author:

Schranghamer Thomas F.,Stepanoff Sergei P.,Trainor Nicholas,Redwing Joan M.,Wolfe Douglas E.,Das Saptarshi^ORCID

Publisher

Elsevier BV

Reference64 articles.

1. New concept ultraviolet photodetectors;Chen;Mater. Today,2015

2. Plasmonic Photodetectors;Dorodnyy;IEEE J. Sel. Top. Quant. Electron.,2018

3. Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna;Tang;Nat. Photonics,2008

4. Nanometer-Scale Photodetectors for High Performance and Unique Functionality;Inokawa,2021

5. Photocurrent generation with two-dimensional van der Waals semiconductors;Buscema;Chem. Soc. Rev.,2015

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Perspectives on 2D materials for hybrid and beyond-Si image sensor applications;2D Materials;2024-08-14

2. Development of Self‐Doped Monolayered 2D MoS₂ for Enhanced Photoresponsivity;Small;2024-08-03

3. Study of an $${\hbox {MoS}}_{2}$$ phototransistor using a compact numerical method enabling detailed analysis of 2D material phototransistors;Scientific Reports;2024-07-03

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