Cross‐Substitution Promoted Ultrawide Bandgap up to 4.5 eV in a 2D Semiconductor: Gallium Thiophosphate-Reference-Cited by-同舟云学术

Cross‐Substitution Promoted Ultrawide Bandgap up to 4.5 eV in a 2D Semiconductor: Gallium Thiophosphate

Published:2021-04-19 Issue:22 Volume:33 Page:2008761
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Yan Yong¹,Yang Juehan²,Du Juan³,Zhang Xiaomei⁴,Liu Yue‐Yang²,Xia Congxin¹,Wei Zhongming²^ORCID

Affiliation:

1. Henan Key Laboratory of Photovoltaic Materials School of Physics Henan Normal University Xinxiang 453007 China

2. State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100083 China

3. State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics Peking University Beijing 100871 China

4. Henan Key Laboratory of Infrared Materials & Spectrum Measures and Applications Henan Normal University Xinxiang 453007 China

Funder

National Natural Science Foundation of China

Henan Normal University

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202008761

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