Oxygen Vacancy Injection as a Pathway to Enhancing Electromechanical Response in Ferroelectrics-Reference-Cited by-同舟云学术

Oxygen Vacancy Injection as a Pathway to Enhancing Electromechanical Response in Ferroelectrics

Published:2021-10-23 Issue:2 Volume:34 Page:2106426
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Advanced Materials

Author:

Kelley Kyle P.¹^ORCID,Morozovska Anna N.²,Eliseev Eugene A.³,Sharma Vinit⁴⁵,Yilmaz Dundar E.⁶,Duin Adri C. T.⁶,Ganesh Panchapakesan¹,Borisevich Albina¹,Jesse Stephen¹,Maksymovych Peter¹,Balke Nina¹,Kalinin Sergei V.¹,Vasudevan Rama K.¹

Affiliation:

1. Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge TN 37831 USA

2. Institute of Physics National Academy of Science of Ukraine pr. Nauki 46 Kyiv 03028 Ukraine

3. Institute for Problems of Materials Science National Academy of Science of Ukraine Krjijanovskogo 3 Kyiv 03142 Ukraine

4. National Institute for Computational Sciences Oak Ridge National Laboratory Oak Ridge TN 37831 USA

5. Joint Institute for Computational Sciences University of Tennessee Knoxville TN 37996 USA

6. Department of Mechanical Engineering The Pennsylvania State University University Park PA 16802 USA

Funder

U.S. Department of Energy

Office of Science

National Energy Research Scientific Computing Center

Lawrence Berkeley National Laboratory

Oak Ridge National Laboratory

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202106426

Reference49 articles.

1. Role of electrode-induced oxygen vacancies in regulating polarization wake-up in ferroelectric capacitors

2. Oxygen-vacancy ordering as a fatigue mechanism in perovskite ferroelectrics

3. Ferroelectric fatigue of Pb(Zr,Ti)O3 thin films measured in atmospheres of varying oxygen concentration

4. Reversible oxygen migration and phase transitions in hafnia-based ferroelectric devices

5. Suppression of Metal-Insulator Transition in VO2 by Electric Field-Induced Oxygen Vacancy Formation

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