Zero‐Bias Power‐Detector Circuits based on MoS <sub>2</sub> Field‐Effect Transistors on Wafer‐Scale Flexible Substrates-Reference-Cited by-同舟云学术

Zero‐Bias Power‐Detector Circuits based on MoS ₂ Field‐Effect Transistors on Wafer‐Scale Flexible Substrates

Published:2022-02-17 Issue:48 Volume:34 Page:2108469
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Advanced Materials

Author:

Reato Eros¹²^ORCID,Palacios Paula³,Uzlu Burkay¹²^ORCID,Saeed Mohamed³^ORCID,Grundmann Annika⁴,Wang Zhenyu⁵,Schneider Daniel S.¹²^ORCID,Wang Zhenxing¹^ORCID,Heuken Michael⁴⁶^ORCID,Kalisch Holger⁴,Vescan Andrei⁴^ORCID,Radenovic Alexandra⁵^ORCID,Kis Andras⁵^ORCID,Neumaier Daniel¹⁷^ORCID,Negra Renato³,Lemme Max C.¹²^ORCID

Affiliation:

1. AMO GmbH Otto‐Blumenthal‐Strasse 25 52074 Aachen Germany

2. Chair of Electronic Devices RWTH Aachen University Otto‐Blumenthal‐Strasse 25 52074 Aachen Germany

3. Chair of High Frequency Electronics RWTH‐Aachen University Kopernikusstraße 16 52074 Aachen Germany

4. Compound Semiconductor Technology RWTH Aachen University Sommerfeldstrasse 18 52074 Aachen Germany

5. School of Engineering EPFL BM 2141, Station 17 1015 Lausanne Switzerland

6. AIXTRON SE Dornkaulstrasse 2 52134 Herzogenrath Germany

7. Bergische Universität Wuppertal Lise‐Meitner‐Str. 13 42 119 Wuppertal Germany

Funder

Deutsche Forschungsgemeinschaft

Graphene Flagship

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202108469

Reference65 articles.

1. Single-layer MoS2 transistors

2. Breakdown of High-Performance Monolayer MoS2 Transistors

3. Two-dimensional flexible nanoelectronics

4. MoS2 Transistors Operating at Gigahertz Frequencies

5. Radio Frequency Transistors and Circuits Based on CVD MoS2

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dielectric‐Doped 2D Tellurium Diodes for Zero‐Bias Radio Frequency Power Detection;Advanced Electronic Materials;2024-07-11

2. Flexible Complementary Metal‐Oxide‐Semiconductor Inverter Based on 2D p‐type WSe₂ and n‐type MoS₂;physica status solidi (a);2024-04-09

3. Atomically Thin MoS₂ Layers Selectively Grown on Mo Patterned Substrates for Field-Effect-Controlled Photosensors;ACS Applied Nano Materials;2024-02-28

4. Effect of Thickness and Thermal Treatment on the Electrical Performance of 2D MoS2 Monolayer and Multilayer Field-Effect Transistors;Journal of Electronic Materials;2024-01-25

5. Design of MoS₂ based Inverter Circuits considering Interface Trap effect;2024 37th International Conference on VLSI Design and 2024 23rd International Conference on Embedded Systems (VLSID);2024-01-06