Dynamic Stabilization of Metastable States in Triple‐Well Ferroelectric Sn2P2S6

Author:

Neumayer Sabine M.1ORCID,Bauer Nora2,Basun Sergey34ORCID,Conner Benjamin S.56,Susner Michael A.7,Lavrentovich Maxim O.2ORCID,Maksymovych Petro1

Affiliation:

1. Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge TN 37831 USA

2. Department of Physics & Astronomy University of Tennessee Knoxville TN 37996 USA

3. Materials and Manufacturing Directorate Air Force Research Laboratory 2179 12th Street Wright‐Patterson Air Force Base OH 45433 USA

4. Azimuth Corporation 4027 Colonel Glenn Highway, Suite 230 Beavercreek OH 45431 USA

5. Sensors Directorate Air Force Research Laboratory 2241 Avionics Circle Wright‐Patterson Air Force Base OH 45433 USA

6. National Research Council Washington, D.C. 20001 USA

7. Materials and Manufacturing Directorate Air Force Research Laboratory Wright‐Patterson Air Force Base OH 45433 USA

Abstract

AbstractPolarization dynamics in ferroelectric materials is governed by the effective potential energy landscape of the order parameter. The unique aspect of ferroelectrics compared to many other transitions is the possibility of more than two potential wells, leading to complicated energy landscapes with new fundamental and functional properties. Here, direct dynamic evidence is revealed of a triple‐well potential in the metal thiophosphate Sn2P2S6 compound using multivariate scanning probe microscopy combined with theoretical simulations. The key finding is that the metastable zero polarization state can be accessed through a gradual switching process and is stabilized over a broad range of electric fields. Simulations confirm that the observed zero polarization state originates from a kinetic stabilization of the nonpolar state of the triple‐well, as opposed to domain walls. Dynamically, the triple‐well of Sn2P2S6 becomes equivalent to antiferroelectric hysteresis loops. Therefore, this material combines the robust and well‐defined domain structure of a proper ferroelectric with dynamic hysteresis loops present in antiferroelectrics. Moreover, the triple‐well enhances mem‐capacitive effects in Sn2P2S6, which are forbidden for ideal double‐well ferroelectrics. These findings provide a path to tunable electronic elements for beyond binary high‐density computing devices and neuromorphic circuits based on dynamic properties of the triple‐well.

Funder

U.S. Department of Energy

Air Force Office of Scientific Research

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

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