Highly Scalable and Robust Mesa‐Island‐Structure Metal‐Oxide Thin‐Film Transistors and Integrated Circuits Enabled by Stress‐Diffusive Manipulation-Reference-Cited by-同舟云学术

Highly Scalable and Robust Mesa‐Island‐Structure Metal‐Oxide Thin‐Film Transistors and Integrated Circuits Enabled by Stress‐Diffusive Manipulation

Author:

Kim Kyung‐Tae¹,Moon Sanghee¹,Kim Minho²,Jo Jeong‐Wan³,Park Chan‐Yong¹,Kang Seung‐Han¹,Kim Yong‐Hoon²⁴,Park Sung Kyu¹^ORCID

Affiliation:

1. School of Electrical and Electronics Engineering Chung‐Ang University Seoul 156‐756 South Korea

2. School of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 16419 South Korea

3. Electrical Engineering Division Department of Engineering University of Cambridge 9 JJ Thomson Avenue Cambridge CB3 0FA UK

4. SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon 16419 South Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

Reference51 articles.

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